

FEATURES
- High reliability InGaAs/InP planar APD structure
- 75μm top-illuminated active area
- Low capacitance
- Low dark current
APPLICATIONS
- Optical receivers up to 2.5 Gb/s
ABSOLUTE MAXIMUM RATINGS
Parameter | Symbol | Rating | Unit |
Forward current | If | 10 | mA |
Reverse current | Ir | 2 | mA |
Operating temperature | Tamb | -40 to +85 | °C |
Storage temperature | Tstg | -40 to +100 | °C |
ELECTRICAL and OPTICAL CHARACTERISTICS at 25oC
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
Responsivity | R | 0.9 | 1.05 | - | A/W |
λ=1550nm, M=1 |
0.8 | 0.9 | - | λ=1310nm, M=1 | |||
Breakdown voltage | Vb | 35 |
45 | 55 | V | Id=10μA
|
Temperature coefficient of Vb | 0.08 | 0.1 | 0.12 | V/°C | --- | |
Dark current | Id | – | 15 | 65 | nA | Vr=0.9Vb |
Cutoff frequency | fc | 1.5 |
3.0 |
- | GHz | M = 10 |
Capacitance | C | – | 0.54 | 0.65 | pF | f = 1MHz, Vr = 0.9 Vb |
Maximum multiplication factor | Mmax | 25 | λ = 1310, 1550nm, |
OUTLINE DRAWING

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